Measurements and Computations of Internal Temperatures of the IGBT and the Diode Situated in the Common Case

This article proposes effective methods of measurements and computations internal temperature the dies Insulted Gate Bipolar Transistor (IGBT) diode mounted in common case. The nonlinear compact thermal model considered device is proposed. takes into account both self-heating phenomena mutual couplings between them. In proposed model, influence on self transfer resistances taken account. Methods each transient impedances occurring this are described factors influencing measurement error these analysed. Some results illustrating properties investigated devices including IGBT antiparallel case shown discussed. Computations usefulness presented compared to measurements. It proved that differences included TO-247 can exceed even 15 K.